| PART |
Description |
Maker |
| 2SC3279 2SC3279N |
TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 2A I(C) | TO-92 晶体管|晶体管|叩| 10V的五（巴西）总裁|甲一（c）|2
NPN EPITAXIAL TYPE (STOROBO FLASH, MEDIUM POWER AMPLIFIER APPLICATIONS)
|
Toshiba, Corp.
Sanyo Semicon Device
Toshiba Semiconductor
Toshiba Corporation
|
| 2SC5720 |
Transistor Silicon NPN Epitaxial Planar Type MEDIUM POWER AMPLIFIER APPLICATIONS STOROBO FLASH APPLICATIONS
MEDIUM POWER AMPLIFIER APPLICATIONS STOROBO FLASH APPLICATIONS 介质功率放大器应STOROBO Flash应用
|
Toshiba Corporation
Toshiba, Corp.
|
| UPA804TC UPA804 UPA804TC-T1 PA804TC |
NPN Epitaxial Transisitor(NPN澶?欢?朵?绠?
NPN Epitaxial Transisitor(NPN外延晶体
NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5004 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD
|
NEC Corp.
NEC[NEC]
|
| MT3S04AU |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS
TRANSISTOR SILICON NPN EPITAXIAL TYPE
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SC1729 SC1729 |
NPN EPITAXIAL PLANAR TYPE(RF power amplifiers on VHF band mobile radio)
From old datasheet system
NPN EPITAXAIL PLANAR TYPE
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| 2SC5011 2SC5011-T1 2SC5011-T2 2SC5011-T1-T2 |
NPN epitaxial-type silicon transistor
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD
|
NEC[NEC]
NEC Corp.
|
| 2SC1967 SC1967 |
RF POWER TRANSISTOR(NPN EPITAXAIL PLANAR TYPE)
From old datasheet system
NPN EPITAXIAL PLANAR TYPE
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| RN1965 RN1964 RN1961 RN1962 RN1963 RN1966 |
Transistor Silicon NPN Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 东芝npn型晶体管硅外延型（厘进程
|
TOSHIBA[Toshiba Semiconductor]
Toshiba Corporation
Toshiba, Corp.
|
| 2SC2791 |
SILICON NPN TRIPLE DIFFUSED TYPE
SILICON NPN EPITAXIAL TYPE(PCT PROCESS)
|
TOSHIBA[Toshiba Semiconductor]
|
